Image collection chip, object imaging recognition device and object imaging recognition method

ABSTRACT

An image collection chip, an object imaging recognition device and an object imaging recognition method are provided. In each set of the pixel confirmation modules of the chip, each modulation unit and each sensing unit are correspondingly provided up and down on the optical modulation layer and the image sensing layer respectively; each modulation unit is provided with at least one modulation subunit, and each of the modulation subunits is provided with several modulation holes penetrating into the optical modulation layer; and the respective modulation holes in a same modulation subunit are arranged into a two-dimensional graphic structure having a specific pattern.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority to Chinese Patent ApplicationNo. 201910700328.7, filed on Jul. 31, 2019, entitled “Image CollectionChip, Object Imaging Recognition Device and Object Imaging RecognitionMethod”, the disclosure of which is incorporated herein by reference inits entirety.

FIELD OF TECHNOLOGY

The present application relates to the technical fields of imaging andobject recognition devices, and particularly to an image collectionchip, an object imaging recognition device and an object imagingrecognition method.

BACKGROUND

Imaging Spectroscopy

Imaging spectroscopy is a technology that organically combines spectraldetection and imaging, and can image an object in different spectra, andsimultaneously obtain the geometric shape information and spectralcharacteristics of the detected object. It is also a technology toobtain many very narrow and spectrally continuous image data ofultraviolet, visible, near infrared and mid-infrared regions ofelectromagnetic waves. Through more than 30 years of development,imaging spectroscopy has become an important means for earth observationand deep space exploration, and has been widely applied in the fields ofagriculture, animal husbandry and forestry production, mineral resourceexploration, cultural relic detection, marine remote sensing,environmental monitoring, disaster prevention and mitigation, militaryreconnaissance and etc.

With the gradual miniaturization of carrying platforms, such as smallplatforms of small satellites, unmanned aerial vehicle and etc., and theendurance requirement of field applications, the demand forminiaturization and lightweight of image collection devices has becomeincreasingly prominent. A conventional image collection device isusually an imaging spectrometer. The imaging spectrometers have threeimaging types in which the opto-mechanical scanning type has movingparts and is heavy and bulky; the push-broom imaging type has acomplicated optical system; and the staring imaging type has limitedspatial resolution and number of spectral channels. All three types failto meet the demands for miniaturization and lightweight.

SUMMARY (I) Technical Problem to be Solved

The embodiments of the present disclosure provide an image collectionchip, an object imaging recognition device and an object imagingrecognition method for overcoming the defect that the imagingspectrometers of the existing image collection devices fail to meet therequirements of miniaturization and lightweight.

(II) Technical Solutions

In order to solve the technical problem above, the disclosure providesan image collection chip, including an optical modulation layer, animage sensing layer and at least two sets of pixel confirmation modules;wherein, the optical modulation layer is located on the image sensinglayer, and each set of the pixel confirmation modules includesmodulation units and sensing units; each modulation unit and eachsensing unit are correspondingly provided up and down on the opticalmodulation layer and the image sensing layer, respectively; wherein,each modulation unit is provided with at least one modulation subunit,and each of the modulation subunits is provided with several modulationholes penetrating into the optical modulation layer; the respectivemodulation holes inside a same modulation subunit are arranged into atwo-dimensional graphic structure having a specific pattern.

In some embodiments, the specific pattern of the two-dimensional graphicstructure includes that:

all the modulation holes inside a same two-dimensional graphic structurehave a same specific cross-sectional shape and the respective modulationholes are arranged in an array in an order that sizes of structuralparameters are gradually varied; and/or

the respective modulation holes inside a same two-dimensional graphicstructure respectively have a specific cross-sectional shape and therespective modulation holes are combined and arranged according to thespecific cross-sectional shape.

In some embodiments, the arrangement order is being arranged row by rowor column by column according to a preset period order when therespective modulation holes are arranged and combined according to thespecific cross-sectional shape.

In some embodiments, no modulation holes are provided in the modulationsubunit at a same position in each of the modulation units.

In some embodiments, a bottom of the modulation hole penetrates theoptical modulation layer or does not penetrate the optical modulationlayer.

In some embodiments, the image collection chip further includes a signalprocessing circuit layer connected below the image sensing layer andconfigure to electrically connect each of the sensing units.

In some embodiments, the sensing unit includes at least one sensingsubunit; respective sensing subunits are arranged in an array, and eachof the sensing subunits is provided with at least one image sensor; allof the sensing subunits are electrically connected through the signalprocessing circuit layer.

In some embodiments, the image collection chip further includes alight-transmitting medium layer between the optical modulation layer andthe image sensing layer.

The present disclosure also provides an object imaging recognitiondevice, including:

a light source configured to emit spectra to an object to be imaged, sothat the spectra are incident on an image collection chip as incidentlight after passing through the object to be imaged; and

the image collection chip as described above provided on a same side ofthe object to be imaged along with the light source; wherein, the imagecollection chip is configured to perform light modulation on theincident light by using each set of the pixel confirmation modules toobtain at least two modulated spectra, and to sense and detect lightintensity of each of the modulated spectra respectively to determinepixel data of respective pixel points respectively.

The present disclosure also provides an object imaging recognitionmethod based on the object imaging recognition device as describedabove; the imaging recognition method includes:

emitting spectra to an object to be imaged using a light source, so thatthe spectra are incident on the image collection chip as incident lightafter the spectra pass through the object to be imaged; and

performing light modulation on the incident light using each set ofpixel confirmation modules of the image collection chip respectively soas to obtain several modulated spectra, and sensing and detecting thelight intensity of each of the modulated spectra respectively todetermine each set of pixel data; and

integrating all the pixel data to form an output image.

(III) Advantageous Effects

The technical solutions above of the present disclosure have thefollowing advantageous effects:

1. The image collection chip of the present disclosure includes anoptical modulation layer, an image sensing layer and at least two setsof pixel confirmation modules. The optical modulation layer is locatedon the image sensing layer, and each set of the pixel confirmationmodules includes modulation units and sensing units. Each modulationunit and each sensing unit are correspondingly provided up and down onthe optical modulation layer and the image sensing layer respectively.The light intensity of the spectrum is sensed and detected by each setof the pixel confirmation modules respectively, so that the pixel dataof respective pixel points is respectively determined, and then all thepixel data is integrated to form a final output image. The imagecollection chip can replace the complicated and precise beam splittingelements and excessive image sensors in the existing object imagingrecognition devices, and use modulation units and sensing units tomodulate the spectra and sense the light intensity respectively, therebyachieving an accurate image reconstruction process, enabling the imagecollection chip to perform light intensity sensing without gratings,prisms, reflectors, or other similar spatial beam splitting elements,thereby greatly reducing the volume of the object imaging recognitiondevice and at the same time improving the precision of the lightintensity sensing, so that the object imaging recognition device has theadvantages of high measurement accuracy, good portability, real-timeon-line detection, simple operation, stable performance, lowmanufacturing cost and etc. The chip has broad prospects forapplications on small platforms such as small satellites, unmannedaerial vehicle and etc.

2. In the image collection chip, each modulation unit is provided withat least one modulation subunit, each of the modulation subunits isprovided with several modulation holes penetrating into the opticalmodulation layer, and respective modulation holes in a same modulationsubunit are arranged into a two-dimensional graphic structure with aspecific pattern. The chip is on a basis that an array of modulationunits has the modulation role on light having different wavelengths inoptoelectronics, and each modulation unit is correspondingly nested witha plurality of modulation subunits, so that image information of anobject to be imaged of multiple spectra may be collected simultaneously,which greatly improves the spectral recognition rate and reduces therate of mis-recognition. The chip can be applicable for iris recognitionand improve the recognition rate by simultaneously obtaining iris imageinformation under a plurality of wavelengths, and the chip canfacilitate the living organism detection for anti-counterfeiting, andincrease the difficulty in cracking and forgery. At the same time, thechip can also reduce the interference caused by contact lenses, cosmeticcontact lenses and different lighting conditions. The chip overcomes theproblem that the existing object imaging recognition device is expensiveand cannot be miniaturized.

BRIEF DESCRIPTION OF THE DRAWINGS

For more clearly illustrating the embodiments of the present disclosureor the technical solutions in the prior art, the drawings to be used indescribing the embodiments or the prior art will be briefly describedbelow. Obviously, the drawings in the following description are someembodiments of the present disclosure, for those of ordinary skill inthe art, other drawings may also be obtained based on these drawingswithout any creative work.

FIG. 1 is a diagram showing an imaging principle of an object imagingrecognition device according to an embodiment of the present disclosure;

FIG. 2 is a diagram showing a working principle of the object imagingrecognition device imaging an iris according to an embodiment of thepresent disclosure;

FIG. 3 is a structural schematic diagram of the image collection chip ofEmbodiment I of the present disclosure;

FIG. 4 is a sectional view of the image collection chip of Embodiment Iof the present disclosure;

FIG. 5 is a schematic diagram of an optical modulation layer ofEmbodiment I of the present disclosure;

FIG. 6 is a structural schematic diagram of an image sensing layer ofEmbodiment I of the present disclosure;

FIG. 7 is a structural schematic diagram of an optical modulation layerof Embodiment II of the present disclosure;

FIG. 8 is a structural schematic diagram of an optical modulation layerof Embodiment III of the present disclosure;

FIG. 9 is a structural schematic diagram of an optical modulation layerof Embodiment IV of the present disclosure;

FIG. 10 is a sectional view of an image collection chip of Embodiment Vof the present disclosure;

FIG. 11 is a sectional view of an image collection chip of Embodiment VIof the present disclosure;

FIG. 12 is a structural schematic diagram of an image collection chip ofEmbodiment VII of the present disclosure;

FIG. 13 is a structural schematic diagram of an optical modulation layerof Embodiment VII of the present disclosure; and

FIG. 14 and FIG. 15 are respectively process diagrams illustrating themethods for preparing and processing the modulation holes of the imagecollection chip of Embodiment I to Embodiment VII of the presentdisclosure.

Description of the reference numbers 100 light source 200 object to beimaged 300 image collection chip  1′ substrate  1 optical modulationlayer  2 image sensing layer  3 signal processing circuit layer  4light-transmitting medium layer  5 modulation unit  6 modulation hole  7sensing unit  8 gap  9 sensing subunit  11 first modulation unit  12second modulation unit  13 third modulation unit  14 fourth modulationunit  15 fifth modulation unit  16 sixth modulation unit 110 firstsubunit 111 second subunit 112 third subunit 113 fourth subunit

DETAILED DESCRIPTION

Implementations of the present disclosure are further described below indetail with reference to the accompanying drawings and embodiments. Thefollowing embodiments are used to illustrate the present disclosure, butcannot be used to limit the scope thereof. Unless specified otherwise,the chips mentioned in the present disclosure are all abbreviations forthe imaging collection chip.

The various embodiments of the present disclosure provide an imagecollection chip that can replace the complicated and precise beamsplitting elements and excessive image sensors in the existing objectimaging recognition devices, and simultaneously modulate multiplespectra and sense the light intensity respectively using modulationunits and sensing units, thereby achieving an accurate imagereconstruction process, enabling the image collection chip to performlight intensity sensing operation without gratings, prisms, reflectors,or other similar spatial beam splitting elements, thereby greatlyreducing the volume of the object imaging recognition device and at thesame time improving the precision of the light intensity sensing, sothat the object imaging recognition device has the advantages of highmeasurement accuracy, good portability, real-time on-line detection,simple operation, stable performance, low manufacturing cost and etc.

Specifically, as shown in FIG. 1 to FIG. 3, the chip 300 includes anoptical modulation layer 1, an image sensing layer 2, and at least twosets of pixel confirmation modules. The optical modulation layer 1 islocated on the image sensing layer 2 and configured to receive incidentlight and modulate the incident light, and the image sensing layer 2 isconfigured to sense light intensities of modulated spectra, so as todetermine corresponding image pixel data with respect to the lightintensity of the spectrum having different wavelengths. Each set of thepixel confirmation modules includes modulation units 5 and sensing units7, correspondingly, each set of the modulation unit 5 and the sensingunit 7 are correspondingly provided up and down on the opticalmodulation layer 1 and the image sensing layer 2 respectively, so thateach modulation unit 5 and each sensing unit 7 can determine at leastone set of image pixel data correspondingly. The original output imageis reconstructed by integrating all the image pixel data.

In this embodiment, each modulation unit 5 is provided with at least onemodulation subunit, each of the modulation subunits is respectivelyprovided with several modulation holes 6 penetrating into the opticalmodulation layer 1, and respective modulation holes 6 in a samemodulation subunit are arranged into a two-dimensional graphic structurewith a specific pattern. The image collection chip 300 of thisembodiment can replace the precise optical components in the existingobject imaging recognition devices so as to perform the precisemodulation and pixel reconstruction on incident light. By using theimage collection chip 300, the modulation role on light having differentwavelengths can be flexibly implemented. The modulation role includes,but is not limited to, the scattering, absorption, projection,reflection, interference, surface plasmon polariton, resonance and etc.of light, so as to improve differences in the spectral responses betweendifferent regions, thereby improving the analytical precision of theimage collection chip 300. In addition, the chip 300 implements themodulation role on light having different wavelengths using one or moretwo-dimensional graphic structures on each modulation unit 5, and thedifferences between two-dimensional graphic structures can also improvethe differences in spectral responses between different regions, therebyimproving the analytical precision of the image collection chip 300.

The chip 300 of this embodiment further includes a signal processingcircuit layer 3 connected under the image sensing layer 2 and configuredto electrically connect each of the sensing units 7, so that thedifferential responses can be calculated according to the lightintensity sensed by each set of the pixel confirmation modules. Sincethe sensors inside each sensing unit 7 can form a pixel point accordingto the sensed light intensity, the intensity distribution of eachwavelength on one pixel can be obtained through an algorithm. Thedifferential responses refer to calculating a difference value between asignal of a responsive spectrum obtained after modulation by the opticalmodulation layer and a signal of an original spectrum, or calculatingdifference values between signals of responsive spectra obtained aftermodulation by each of the modulation units 5, or calculating differencevalues between signals of responsive spectra obtained after modulationby each of the modulation subunits. The original spectra refer tospectra of the incident light entering the optical modulation layer.

Further, each sensing unit 7 includes at least one sensing subunit 9,and the respective sensing subunits 9 are arranged in an array. Each ofthe sensing subunits 9 is provided with at least one image sensor, andall of the sensing subunits 9 are electrically connected through thesignal processing circuit layer 3, so as to distinguish the pixel pointsformed on the modulation units 5 and the sensing units 7 of differentsets more carefully, thereby using a plurality of pixel points generatedby the modulation subunits of a same position in each set and thecorresponding sensing subunits 9 to constitute an image containingpieces of spectral information.

As shown in FIG. 1, bases on the various embodiments of the presentdisclosure, an object imaging recognition device is provided. The deviceincludes a light source 100 and an image collection chip 300. The lightsource 100 is configured to emit spectra to an object to be imaged 200,so that the spectra are incident on the image collection chip 300 asincident light after passing through the object to be imaged 200. Theimage collection chip 300 and the light source 100 are simultaneouslydisposed on a same side of the object to be imaged 200. The imagecollection chip 300 is configured to perform light modulation on theincident light by using each set of the pixel confirmation modules toobtain at least two modulated spectra, and to sense and detect the lightintensity of respective modulated spectra respectively to determine eachof the pixel points, so that all of the pixels are finally integrated toform an image.

For facilitating the spectra of the light source 100 to pass through theobject to be imaged 200 so that the reflected light formed is used asthe incident light of the chip 300, it is preferable to simultaneouslyarrange the light source 100 and the image collection chip 300 on a sameside of the object to be imaged 200. Taking FIG. 2 as an example, thelight source 100 and the image collection chip 300 are simultaneouslydisposed at a lower side of the object to be imaged 200. The spectra ofvisible-near infrared light generated by the light source 100 canpenetrate inside the object to be imaged 200 using the light reflectionprinciple, and all of the spectra form incident light incident on theimage collection chip 300 under the act of reflection. This structuralarrangement can expand the testing space and improve the convenience inobject imaging and recognition.

FIG. 2 shows a diagram illustrating imaging principle of the objectimaging recognition device according to the present disclosure appliedto image an iris 210. It can be appreciated that, the image collectionchip 300 and the object imaging recognition device described in thepresent disclosure can perform imaging recognition not only on the iris210, but also on any other object to be imaged 200. It is only needed toadjust the parameters such as the volume of each modulation unit 5 ofthe image collection chip 300, the corresponding wavelengths of theincident light and etc. according to the imaging needs.

Hereinafter, the iris 210 is taken as an object to be imaged as anexample, and the image collection chip 300 and the object imagingrecognition device of the present disclosure are described in detailspecifically through several embodiments. The chips 300 described in thevarious embodiments below are suitable for the above-mentioned objectimaging recognition device.

Embodiment I

As shown in FIG. 3 and FIG. 4, in the image collection chip 300 providedby Embodiment I, the optical modulation layer 1 includes a plurality ofmodulation units 5. All the modulation holes 6 in modulation units 5penetrate the optical modulation layer 1. The two-dimensional graphicstructure composed of a plurality of modulation holes 6 inside eachmodulation unit 5 has a same specific cross-sectional shape. Sixmodulation units 5 composed of an array of oval modulation holes 6 shownin FIG. 2 are taken as an example for describing Embodiment I. All themodulation holes 6 inside each modulation unit 5 are arranged in anarray in an order that sizes of structural parameters are graduallyvaried with a same rule to form the two-dimensional graphic structure.In this two-dimensional graphic structure, all the modulation holes 6are arranged in an array, and all the modulation holes 6 are arrangedrow by row and column by column in an order from small to largeaccording to a length of a major axis, a length of a minor axis and anangle of rotation.

It can be understood that, as shown in FIG. 5, since all the modulationholes 6 in this embodiment are arranged according to the same pattern,that is, being gradually arranged row by row and column by column fromsmall to large according to the structural parameters of the length ofthe major axis, the length of the minor axis and the angle of rotation,all the modulation holes 6 on the optical modulation layer 1 can beregarded as an integral modulation unit 5, and can also be furtherarbitrarily divided into several modulation units 5. The arbitrarilydivided modulation units 5 have different modulating roles on thespectrum. In theory, an infinite number of modulated spectrum samplescan be obtained, which dramatically increases the amount of data forreconstructing the original spectrum, and is helpful for restoring thespectral pattern of the broadband spectrum. Then, the effectiveness ofthe modulating roles of the modulation unit 5 on the light havingdifferent wavelengths can be determined according to the structuralparameter characteristics of the modulation holes 6 inside eachmodulation unit 5. The reconstructing process is implemented by a dataprocessing module including spectral data preprocessing and a datapredicting model. In this embodiment, the spectral data preprocessingrefers to preprocessing noises existing in the differential responsedata obtained above. The processing methods used for the spectral datapreprocessing include, but are not limited to, Fourier transform,differential, and wavelet transform. The data predicting model includespredictions of pattern parameters of the object to be imaged 200 fromspectral data information. The algorithms used include, but are notlimited to, least squares method, principal component analysis, andartificial neural network.

It can be understood that, in this embodiment, each modulation unit 5 isprovided up and down corresponding to one sensing unit 7, so that theimage sensors inside the sensing unit 7 are used to form a pixel pointwith the spectrum received by the modulation unit 5, and the intensitydistribution over a pixel point can be obtained through an algorithm. Aplurality of pixel points formed correspondingly to different sets ofpixel confirmation modules are integrated to form an image containingmultiple spectrum information.

Further, since different regions (modulation subunits) divided in eachmodulation unit 5 have different structural parameters, each modulationsubunit has different modulation role on the light having differentwavelengths, and the modulation role includes, but is not limited to,scattering, absorption, transmission, reflection, interference,polariton and etc. The final effect of modulation is to determine thatthe light having different wavelengths has different transmissionspectra when it passes through different modulation subunit regions ofeach modulation unit 5. The same input spectrum has differenttransmission spectra after the input spectrum passes through differentregions in a same two-dimensional graphic structure.

In this embodiment, a sensing unit 7 is disposed correspondingly beloweach modulation unit 5, and a plurality of sensors are provided in eachsensing unit 7, as shown in FIG. 6. Each sensor in the same sensing unit7 respectively corresponds to a different region in the same modulationunit 5, and each sensor and its corresponding region constitute a pixelpoint respectively. Therefore, each set of the pixel confirmationmodules can form more than one pixel point respectively, and theintensity distribution of each wavelength on a pixel point can beobtained through an algorithm. A plurality of pixel points formedcorrespondingly to a same position of different sets of pixelconfirmation modules are integrated to form an image containing multiplespectrum information.

It can be understood that the specific cross-sectional shape of themodulation holes 6 above includes circle, ellipse, cross, regularpolygon, star, rectangle and so on, or any combination thereof.Correspondingly, the structural parameters of the modulation holes 6above include inner diameter, length of major axis, length of minoraxis, rotation angle, number of angles, side length and etc.

The light source 100 applicable to the object imaging recognition devicedescribed in Embodiment I is a light source from visible light tonear-infrared band, and a wavelength range of the light source 100 is400 nm to 1100 nm. The optical modulation layer 1 has a thickness of 60nm to 1200 nm. The optical modulation layer 1 and the image sensinglayer 2 are directly connected or connected through a light-transmittingmedium layer 4. The image sensing layer 2 and the signal processingcircuit layer 3 are electrically connected. In this embodiment, as shownin FIG. 5, six modulation units 5 in total are arranged on the opticalmodulation layer 1, and all the modulation units 5 are arranged in anarray. And all the modulation holes 6 of each modulation unit 5 areelliptical, and lengths of minor axes of all the elliptical modulationholes 6 are increased row by row and column by column, respectively. InFIG. 5, the horizontal direction is taken as the horizontal axis, andthe vertical direction is taken as the vertical axis. All the ellipticalmodulation holes 6 in each modulation unit 5 are rotated from thevertical axis to the horizontal axis row by row and column by column,and the rotation angles are gradually increased. All the modulationholes 6 in each modulation units 5 constitute a same two-dimensionalgraphic structure which is a matrix structure as a whole, and the areaof the matrix structure ranges from 200 μm² to 40000 μm².

When the image collection chip 300 described in this embodiment ismanufactured, a silicon-based material is selected as the material ofboth the optical modulation layer 1 and the image sensing layer 2 at thesame time, so as to have a good compatibility in the process of thepreparation technology. When the optical modulation layer 1 is prepared,the optical modulation layer 1 may be directly generated on the imagesensing layer 2, or the prepared optical modulation layer 1 may betransferred to the image sensing layer 2 firstly.

The direct generation of the optical modulation layer 1 specificallyincludes: directly growing the optical modulation layer 1 arrangedaccording to the structure shown in FIG. 5 on the image sensing layer 2by a deposition; or installing a substrate made of the silicon-basedmaterial on the image sensing layer 2, then performing micro-nanoprocessing and perforating on the substrate according to the structureshown in FIG. 5 to obtain the optical modulation layer 1.

The process of the directly growing by the deposition above is: Stepone, a silicon flat panel is deposited on the image sensing layer 2through sputtering, chemical vapor deposition and etc. Step two, thedesired two-dimensional graphic structure as shown in FIG. 6 is drawn onthe silicon flat panel by using a pattern transfer method such asphotoetching, electron beam exposure and etc. The two-dimensionalgraphic structure is specifically that, only the minor axes and therotation angles of the elliptical modulation holes 6 are graduallyadjusted. The major axis of the ellipse is selected from a fixed valuein the range of 200 nm to 1000 nm, for example, 500 nm; and the lengthof the minor axis varies within the range of 120 nm to 500 nm. Therotation angle of the ellipse varies within the range of 0° to 90°, andthe arrangement period of the ellipses is a fixed value in the range of200 nm to 1000 nm, for example, 500 nm. The pattern of the modulationunit 5 has an entire area range from 200 μm² to 40,000 μm² and is in arectangular array structure. Step three, the silicon flat panel isetched through reactive ion etching, inductively coupled plasma etching,ion beam etching and etc. to obtain the desired optical modulation layer1. Finally, the optical modulation layer 1 and the image sensing layer 2are electrically connected as a whole to the signal processing circuitlayer 3.

The transfer preparation method of the optical modulation layer 1 aboveis specifically: firstly, performing micro-nano processing andperforating on the substrate according to the structure shown in FIG. 5to obtain the prepared optical modulation layer 1, then transferring theprepared optical modulation layer 1 onto the image sensing layer 2.Specifically, the process of transferring the optical modulation layer 1is that, firstly preparing the optical modulation layer 1 on a siliconwafer or SOI (referring to the silicon-on-insulator silicon waferstructure) according to the parameters above, then transferring theoptical modulation layer 1 onto the image sensing layer 2 with transfermethods, and finally, electrically connecting the optical modulationlayer 1 and the image sensing layer 2 as a whole to the signalprocessing circuit layer 3.

As shown in FIG. 14 and FIG. 15, this embodiment also provides anotherprocess for preparing the image collection chip 300, which isspecifically that the image sensing layer 2 is equipped with a III-Vgroup detector that is specifically a GaAs/InGaAs quantum well detector.As shown in FIG. 14, the detector is reversely bonded to a CMOS circuit.The detector includes a GaAs substrate 1′ and an InGaAs quantum wellimage sensing layer 2. As shown in FIG. 15, after the substrate 1′ isdirectly thinned, micro-nano processing is performed on the substrate 1′so as to have a two-dimensional graphic structure to form the opticalmodulation layer 1. The difference between this preparation process andthe above-mentioned micro-nano processing and perforating only lies inthat an upper surface of the image sensing layer 2 composed of detectorsis directly used as the substrate 1′ for the micro-nano processing,thereby ensuring a tight connection between the processed and preparedoptical modulation layer 1 and the image sensing layer 2, and avoidingthe appearance of gaps which affects the modulation effect of the light.

The complete process of image collection and reconstruction by theobject imaging recognition device of this embodiment is as follows: asshown in FIG. 2, firstly, a light source 100 having a wide spectrum fromvisible light to near infrared is irradiated to an iris 210 of a humaneye, so that the iris 210 absorbs the incident light and reflects it onthe chip 300. The reflected light emitted on the chip 300 by the iris210 is the incident light of the chip 300. Then, the incident light isincident on the optical modulation layer 1 and modulated by each of themodulation units 5. In this process, since different regions on eachmodulation unit 5 have different modulation roles, the transmissionspectra are also different. A plurality of sensing units 7 on the imagesensing layer 2 are disposed correspondingly below each modulation unit,and as shown in FIG. 4 and FIG. 5, under the corresponding action ofmultiple sets of pixel confirmation modules, the respective regions ofeach modulation unit 5 in FIG. 4 respectively correspond to therespective sensing subunits 9 in each of sensing unit 7 in FIG. 5.Therefore, the transmission spectrum obtained by each sensing subunit 9is different, so that each modulation subunit and each sensing subunit 9can form a set of pixel confirmation submodules, and each submodule canrespectively recognize a part of the spectrum information in a pixelpoint, thus the submodules in the respective regions can be integratedto obtain multiple spectrum information of the pixel point. Therespective pixel points can be further integrated to obtain all thepixel points of the image and the iris image can be reconstructedaccordingly. It can be understood that, since the two-dimensionalgraphic structures on the modulation unit corresponding to each of thesensing subunits 9 are the same, and the iris image at a same frequencycan be obtained by obtaining the response of light in different spatialpositions of the image after the light is subjected to the samemodulation roles.

Embodiment II

The structures, principles, object imaging recognition methods and chippreparation methods of the image collection chip 300 and the objectimaging recognition device of Embodiment II are basically the same asthose in Embodiment I, and the same contents are not describedrepeatedly. The difference lies in that:

as shown in FIG. 7, for the image collection chip 300 of thisembodiment, in each modulation unit 5 provided on the optical modulationlayer 1, all the modulation holes 6 in each of the two-dimensionalgraphic structures respectively have specific cross-sectional shapes,and the respective modulation holes 6 are freely combined and arranged(i.e., arranged arbitrarily without rules) according to the specificcross-sectional shapes. Specifically, in the two-dimensional graphicstructure, some of the modulation holes 6 have the same specificcross-sectional shapes, and the respective modulation holes 6 having thesame specific cross-sectional shape constitute a plurality of modulationhole 6 groups, and each of the modulation hole 6 groups has specificcross-sectional shapes different form each other, and all the modulationholes 6 are freely combined.

It can be understood that, the modulation units 5 as a whole can beregarded as modulating a spectrum having a specific wavelength, or canbe freely divided into several micro-nano modulation subunits, so as tobe able to modulate the spectrum having multiple different wavelengths,thereby increasing the flexibility and diversity of light modulation.

Embodiment III

The structures, principles, object imaging recognition methods and chippreparation methods of the image collection chip 300 and the objectimaging recognition device of Embodiment III are basically the same asthose in Embodiment II, and the same contents are not describedrepeatedly. The difference lies in that:

two or more modulation units 5 are arranged on the optical modulationlayer 1 of the image collection chip 300 in this embodiment, and eachmodulation unit 5 is further divided into at least two modulationsubunits. All the modulation holes 6 in each modulation subunit arerespectively combined and arranged according to the specificcross-sectional shape, and the arrangement order is being arranged rowby row or column by column according to a preset periodic order. Themodulation holes 6 of the modulation subunits inside a same region ofeach modulation unit 5 have the same cross-sectional shape andarrangement period. Therefore, the modulation subunits at differentpositions of each modulation unit 5 have different modulation roles onthe same incident light. By changing the gradual order of the structuralparameters of the modulation holes 6 inside the modulation units 5and/or the specific cross-sectional shapes of the modulation holes 6according to the modulation requirement, the modulation role and/or themodulated object of the current modulation unit 5 can be changed.

Specifically, as shown in FIG. 8, six modulation units 5 are distributedon the optical modulation layer 1, each three modulation units 5constitute a row, and there are two rows in total. Specifically, a firstmodulation unit 11, a second modulation unit 12 and a third modulationunit 13 are arranged in the first row, and a fourth modulation unit 14,a fifth modulation unit 15 and a sixth modulation unit 16 arecorrespondingly arranged in the second row. According to a samestructure ratio, each modulation unit is further divided into fourmodulation subunits, that is, a first subunit 110 located at an upperleft corner of the unit matrix, a second subunit 111 located at an upperright corner of the unit matrix, a third subunit 112 located at an lowerleft corner of the unit matrix and a fourth subunit 113 located at anlower right corner of the unit matrix.

In this embodiment, the modulation holes of the modulation subunits in asame region on each modulation unit 5 have the same structuralparameters and arrangement periods. Specifically, the modulation holes 6inside the first modulation subunit 110 and the second modulationsubunit 111 are circular but have different inner diameters. Therefore,the first modulation subunit 110 has a first modulating mode withrespect to the input spectrum, and the second modulation subunit 111 hasa second modulating mode with respect to the input spectrum. Themodulation holes 6 inside the third modulation subunit 112 are oval, andthe third modulation subunit 112 has a third modulating mode withrespect to the input spectrum. The modulation holes 6 in the fourthmodulation subunit 113 are triangle, and the respective modulation holes6 in the fourth modulation subunit 113 are arranged periodically row byrow and column by column according to the sizes of the structuralparameters, and the fourth modulation subunit 113 has a fourthmodulating mode with respect to the input spectrum. The modulationsubunits at a same position in different modulation units 5 have a samestructure, but the modulation subunits at different positions aredifferent from each other. Therefore, each of the modulation subunitshas different modulating role on the same incident light. Each of themodulation subunits respectively corresponds to one sensing subunit onthe image sensing layer 2.

It can be understood that, the “a certain modulating mode for lighthaving different wavelengths” in this embodiment may include, but is notlimited to, effects such as scattering, absorption, transmission,reflection, interference, surface plasmon polariton, resonance and etc.The first, second and third light modulating methods are different fromeach other. By the arrangements of the modulation holes 6 inside themodulation units 5, differences in the spectral response betweendifferent units can be improved, and by increasing the number of theunits, the sensitivity to the differences between different spectra canbe improved.

It can be understood that, for measuring different incident spectra, themodulation role can be changed by adjusting the structural parameters ofthe modulation holes 6 inside each modulation unit 5. The adjustment ofthe structural parameters includes, but is not limited to one of thevarious parameters of the two-dimensional graphic structure, such as thearrangement period of the modulation holes, modulation hole radius, sidelength, duty ratio, and thickness of the modulation unit, and etc, orany combination thereof. In this embodiment, the duty ratio refers to aratio of the area of the modulation holes 6 to the total area of themodulation unit 5.

In this embodiment, the optical modulation layer 1 is made of a siliconnitride flat plate having a thickness of 200 nm to 500 nm. The opticalmodulation layer 1 is provided with 1000 to 250000 modulation units 5 intotal, and each of the modulation units 5 has an area range from 200 μm²to 40000 μm². Various geometrical shapes are selected inside eachmodulation unit 5 as the specific cross-sectional shapes of themodulation holes 6. Each modulation unit 5 has a periodic arrangement ofthe same shape, and its duty ratio is 10% to 90%. The remainingstructures are the same as those of Embodiment I or Embodiment II.

Each modulation unit 5 forms one pixel point along with a sensing unitbelow it. The intensity distribution of each wavelength on a pixel pointcan be obtained by an algorithm. By integrating images of the pixelpoints constituted by the submodules at a same position of differentunits under a same modulation mode, a plurality of pixel pointsconstitute an image containing multiple spectrum information.

Embodiment IV

The structures, principles, object imaging recognition methods and chippreparation methods of the image collection chip 300 and the objectimaging recognition device of Embodiment IV are basically the same asthose in Embodiment III, and the same contents are not describedrepeatedly. The difference lies in that: no modulation hole 6 isprovided inside the modulation subunits on a same region of eachmodulation unit 5. Taking FIG. 9 as an example, the first modulationsubunit 110, the second modulation subunit 111 and the third modulationsubunit 112 respectively corresponds to light having a specificwavelength, and has a narrow-band filtering function. And no modulationhole 6 is provided in the fourth modulation subunit 113 so that theincident light directly passes through the region of the fourthmodulation subunit 113.

Correspondingly, a corresponding sensing subunit is provided below eachmodulation subunit. After the light is subjected to narrow-bandfiltering of the first modulation subunit 110, the second modulationsubunit 111 and the third modulation subunit 112, the light intensity isrespectively detected by the light sensors inside the correspondingsensing subunits. Since the light passing through the fourth modulationsubunit 113 is not subjected to the narrow-band filtering, the lightintensity detected by the corresponding sensing subunit 9 can be takenas a reference item. A differential processing is performed on the firstthree sets of light intensities and the fourth set of light intensity,respectively, so that the light intensity of each wavelength afternarrow-band filtering can be obtained. In addition, by arranging thefourth modulation subunit 113, the boundary of the object can also belocated.

It can be understood that, the micro integrated image collection chip300 of this embodiment may apply the modulation units 5 of Embodiment I,the modulation units 5 of Embodiment II, the modulation units 5 ofEmbodiment III or any combination of the modulation units 5 ofEmbodiment I, Embodiment II and Embodiment III.

Embodiment V

Based on the structures, principles, object imaging recognition methodsand chip preparation methods of the image collection chip 300 and theobject imaging recognition device of any of the embodiments above, thisembodiment V provides an image collection chip 300, an object imagingrecognition device and an object imaging recognition method. The samecontents between embodiment V and the various embodiments above are notdescribed repeatedly, and the difference lies in that:

As shown in FIG. 10, the image collection chip 300 in embodiment Vfurther includes a light-transmitting medium layer 4 located between theoptical modulation layer 1 and the image sensing layer 2. Specifically,the light-transmitting medium layer 4 has a thickness of 50 nm to 1 μm,and may be made of silicon dioxide.

In the image collection chip 300 of this embodiment, when a processscheme of directly growing by deposition is applied in the preparationof the optical modulation layer 1, the light-transmitting medium layer 4may be covered on an image sensing layer 2 by chemical vapor deposition,sputtering, and spin coating, then the deposition and etching of theoptical modulation layer 1 may be performed on the top of thelight-transmitting medium layer 4. When a transfer process scheme isapplied, silicon dioxide can be used as a preparation substrate for theoptical modulation layer 1, and the optical modulation layer 1 isprepared by directly processing on an upper half of the substrate withmicro-nano drilling, then a lower half of the silicon dioxide substrateis directly used as the light-transmitting medium layer 4, and theprepared optical modulation layer 1 and the light-transmitting mediumlayer 4 are transferred to the image sensing layer 2 as a whole.

It can be understood that, the light-transmitting medium layer 4 of thisembodiment may also be set as that: the optical modulation layer 1 abovethe image sensing layer 2 as a whole is supported through an externalsupport structure, so that the optical modulation layer is suspendedwith respect to the image sensing layer 2. As a result, an air portionbetween the optical modulation layer 1 and the image sensing layer 2 isthe light-transmitting medium layer 4.

Embodiment VI

Based on the structures, principles, object imaging recognition methodsand chip preparation methods of the image collection chip 300 and theobject imaging recognition device described in any of the embodimentsabove, this embodiment VI further provides an image collection chip 300,an object imaging recognition device and an object imaging recognitionmethod. The same contents between embodiment VI and the variousembodiments above are not described repeatedly, and the difference liesin that:

as shown in FIG. 11, in the image collection chip 300 of embodiment VI,respective modulation holes 6 do not penetrate the optical modulationlayer. It can be understood that, whether the modulation hole 6penetrates the optical modulation layer or not will have no adverseeffect on the modulation role of the optical modulation layer 1. This isbecause that the silicon-based material or other materials selected forthe optical modulation layer 1 are light-transmitting materials. When aspectrum is incident into the optical modulation layer 1, a modulationrole occurs due to the effect of the structure of the respectivemodulation units 5, but the bottom of the modulation holes 6 has noadverse effect on the spectrum modulation.

In the image collection chip 300 of this embodiment, a thickness fromthe bottom of the modulation holes 6 of the optical modulation layer 1to the bottom of the optical modulation layer is 60 nm to 1200 nm, andthe thickness of the entire optical modulation layer is 120 nm to 2000nm.

Embodiment VII

Based on the structures, principles, object imaging recognition methodsand chip preparation methods of the image collection chip 300 and theobject imaging recognition device described in any of the embodimentsabove, this embodiment VII further provides an image collection chip300, an object imaging recognition device and an object imagingrecognition method. The same contents between embodiment VII and thevarious embodiments above are not described repeatedly, and thedifference lies in that:

as shown in FIG. 12 and FIG. 13, in the image collection chip 300 ofthis embodiment, six modulation units 5 which are a first modulationunit 11, a second modulation unit 12, a third modulation unit 13, afourth modulation unit 14, a fifth modulation unit 15 and a sixthmodulation unit 16, respectively, are distributed on the opticalmodulation layer 1. In this embodiment, the first modulation unit 11,the third modulation unit 13 and the fourth modulation unit 14 arearranged according to the periodic structure of the modulation unit 5 ofEmbodiment III, and the second modulation unit 12, the fifth modulationunit 15 and the sixth modulation unit 16 are arranged according to thegradual structure of the modulation unit 5 of Embodiment I.

It can be understood that, the structural arrangement of any suitablemodulation unit 5 in Embodiment I to Embodiment IV may also be selectedas the modulation unit 5 at the corresponding position according to thespectral modulation needs. It can be seen from above that, the opticalmodulation layer 1 of embodiment VII uses the differences in thespecific cross-sectional shapes of different modulation holes 6 amongdifferent units, and the specific arrangement of the modulation holes 6in a same unit, to perform different modulation roles on the spectrumwith different wavelengths by adjusting the specific cross-sectionalshapes of the modulation holes 6, the structural parameters of themodulation holes 6 and the arrangement period of the modulation holes 6.

It can be understood that, for the structures of the modulation units 5that are arranged in a gradual array according to Embodiment I andEmbodiment II, the modulation units 5 arbitrarily divided have differentmodulating roles on the spectrum. In theory, an infinite number ofmodulated spectrum samples can be obtained, which dramatically increasesthe amount of data for reconstructing the original spectrum, and ishelpful for restoring the spectral pattern of the broadband spectrum.

As for the structures of the periodic modulation units 5 of EmbodimentIII and Embodiment IV, they can generate the dispersion and resonanceeffects of the two-dimensional period. The resonance effect includes,but is not limited to, the principles of energy band control of photoniccrystal, resonance of the two-dimensional grating and etc. The detectionaccuracy for specific wavelengths can be enhanced through resonance.

When the modulation units 5 in the above Embodiment I, Embodiment II,Embodiment III and Embodiment IV are applied to the chip 300 at the sametime, the two advantages above can be integrated. When the size range ofthe optical modulation layer is cut, the image collection chip 300 ofthe four embodiments above can be prepared into a structure of the orderof micrometers or even smaller, which is of great significance for theminiaturization and micromation manufacture and use of the imagecollection chip 300. The overall size of the chip 300 is equivalent tothat of a camera module, which can be smaller than 1 cm×1 cm×0.4 cm. Thechip 300 can be integrated on portable mobile devices such as mobilephones and bracelets. In addition, the above-mentioned opticalmodulation layer 1 can cooperate with the image sensing layer 2 composedof different image sensors, to achieve the full-band spectral detectionin principle, so that the wide-spectrum detection performance of theimage collection chip 300 is more excellent.

Embodiment VIII

Based on the structures, principles, object imaging recognition methodsand chip preparation methods of the image collection chip 300 and theobject imaging recognition device described in any of the embodimentsabove, this embodiment VIII further provides a micro imaging collectionchip 300, a spectral imaging device and a spectral imaging method. Thetarget object 2 can be expanded into any object. As shown in FIG. 1,firstly, a light source 100 having a broad spectrum from visible lightto near infrared is irradiated onto the target object 200, and then thereflected light is collected by the image collection chip 300.Alternatively, the light source 100 is omitted, and the target object200 directly emits light to the image collection chip 300 for beingcollected by the same. Then, as shown in FIG. 3 and FIG. 4, the incidentlight is incident into the optical modulation layer 1 and modulated byeach of the modulation units 5. In this process, since different regionson each modulation unit 5 have different modulation roles, thetransmission spectra are also different. A plurality of sensing units 7on the image sensing layer 2 are disposed correspondingly below eachmodulation unit, and as shown in FIG. 4 and FIG. 5, under thecorresponding action of multiple sets of pixel confirmation modules, therespective regions in each modulation unit 5 in FIG. 4 respectivelycorrespond to the respective sensing subunits 9 in each sensing unit 7in FIG. 5. Therefore, the transmission spectrum obtained by each sensingsubunit 9 is different, so that each modulation subunit and each sensingsubunit 9 can form a set of pixel confirmation submodules, and each ofthe submodules can respectively recognize a part of the spectruminformation in a pixel point, thus the submodules in the respectiveregions can be integrated to obtain multiple spectrum information of thepixel point. The respective pixel points can be further integrated toobtain all the pixel points of the image and the target object image canbe reconstructed accordingly. It can be understood that, since thetwo-dimensional graphic structures on the modulation unit correspondingto the respective sensing subunits 9 are the same, and the target objectimage at a same frequency can be obtained by obtaining the response oflight in different spatial positions of the image after the light issubjected to the same modulation roles.

In summary, the image collection chip 300 of the various embodiments ofthe present disclosure includes an optical modulation layer 1, an imagesensing layer 2 and at least two sets of pixel confirmation modules. Theoptical modulation layer 1 is located on the image sensing layer 2, andeach set of the pixel confirmation modules includes modulation units 5and sensing units 7. Each modulation unit 5 and each sensing unit 7 arecorrespondingly provided up and down on the optical modulation layer 1and the image sensing layer 2, respectively. The light intensity of thespectrum is sensed and detected by each set of the pixel confirmationmodules respectively, so that the pixel data of respective pixel pointsis respectively determined, thereby integrating all the pixel data toform the final output image. The image collection chip 300 can replacethe complicated and precise beam splitting elements and excessive imagesensors in the existing object imaging recognition devices, and usemodulation units 5 and sensing units 7 to modulate the spectra and sensethe light intensity respectively, thereby achieving an accurate imagereconstruction process, enabling the image collection chip 300 toperform light intensity sensing without gratings, prisms, reflectors, orother similar spatial beam splitting elements, thereby greatly reducingthe volume of the object imaging recognition device and at the same timeimproving the precision of the light intensity sensing, so that theobject imaging recognition device has the advantages of high measurementaccuracy, good portability, real-time on-line detection, simpleoperation, stable performance, low manufacturing cost and etc.

In the image collection chip 300, each modulation unit is provided withat least one modulation subunit, and each of the modulation subunits isrespectively provided with several modulation holes 6 penetrating intothe optical modulation layer 1, and respective modulation holes 6 in asame modulation subunit are arranged into a two-dimensional graphicstructure with a specific pattern. The chip 300 may collect imageinformation of an object to be imaged of multiple spectra simultaneouslyon a basis that an array of modulation units 5 has the modulation roleon light having different wavelengths in optoelectronics and eachmodulation unit 5 is correspondingly nested with a plurality ofmodulation subunits, which greatly improves the spectral recognitionrate and reduces the rate of mis-recognition. The chip 300 can beapplicable for biological iris recognition to facilitate the livingorganism detection for anti-counterfeiting, and increase the difficultyin cracking and forgery. At the same time, the chip 300 can also reducethe interference caused by contact lenses, cosmetic contact lenses anddifferent lighting conditions, and overcome the problem that theexisting object imaging recognition device is expensive and cannot beminiaturized.

The embodiments of the present disclosure are presented for the purposesof illustration and description, and are not exhaustive or to limit thepresent disclosure to the disclosed forms. Many modifications andvariations are obvious to the person of ordinary skills in the art. Theembodiments are selected and described in order to better illustrate theprinciples and practical applications of the present disclosure, and tomake the person of ordinary skills in the art to appreciate the presentdisclosure so as to design various embodiments suitable for specificuses and having various modifications.

In the description of the present disclosure, unless specifiedotherwise, both “a plurality of” and “several” means two or more; unlessspecified otherwise, “notch” means the shapes other than the shape witha flush cross section. The orientation or position relations indicatedby the terms “upper”, “lower”, “left”, “right”, “inner”, “outer”, “frontend”, “rear end”, “head portion”, “tail portion” etc. are based on theorientation or position relations shown in the drawings, which is merelyfor the convenience of describing the present disclosure and simplifyingthe description, and is not to indicate or imply that the device orcomponent referred to must have a specific orientation, be constructedand operated in the specific orientation. Therefore, it cannot beconstrued as limiting the present disclosure. In addition, the terms“first”, “second” and “third” etc. are for the purpose of description,and cannot be construed as indicating or implying the relativeimportance.

In the description of the present disclosure, it should be noted thatunless specifically defined or limited, the terms “mount”, “connectwith”, and “connect to” should be understood in a broad sense, forexample, they may be fixed connections or may be removable connections,or integrated connections; may be mechanical connections or electricalconnections; may be direct connections or indirect connections throughintermediate mediums. For a person of ordinary skills in the art, thespecific meanings of the terms above in the present disclosure can beunderstood according to specific situations.

1. An image collection chip, comprising an optical modulation layer, animage sensing layer and at least two sets of pixel confirmation modules;wherein, the optical modulation layer is located on the image sensinglayer, and each set of the pixel confirmation modules comprisesmodulation units and sensing units; each of the modulation units andeach of the sensing units are correspondingly provided up and down onthe optical modulation layer and the image sensing layer, respectively;wherein each of the modulation units is provided with at least onemodulation subunit, and each of the modulation subunits is provided withseveral modulation holes penetrating through the optical modulationlayer; respective modulation holes inside a same modulation subunit arearranged into a two-dimensional graphic structure having a specificpattern.
 2. The image collection chip of claim 1, wherein the specificpattern of the two-dimensional graphic structure comprises: all themodulation holes inside a same two-dimensional graphic structure have asame specific cross-sectional shape and the respective modulation holesare arranged in an array in an order that sizes of structural parametersare gradually varied; and/or the respective modulation holes inside asame two-dimensional graphic structure respectively have a specificcross-sectional shape and the respective modulation holes are combinedand arranged according to the specific cross-sectional shape.
 3. Theimage collection chip of claim 2, wherein an arrangement order is beingarranged row by row or column by column according to a preset periodorder when the respective modulation holes are arranged and combinedaccording to the specific cross-sectional shape.
 4. The image collectionchip of claim 1, wherein no modulation hole is provided inside themodulation subunit at a same position in each of the modulation units.5. The image collection chip of claim 1, wherein a bottom of themodulation hole penetrates the optical modulation layer or does notpenetrate the optical modulation layer.
 6. The image collection chip ofclaim 1, further comprising a signal processing circuit layer connectedbelow the image sensing layer and configured to electrically connectrespective sensing units.
 7. The image collection chip of claim 6,wherein the sensing unit comprises at least one sensing subunit;respective sensing subunits are arranged in an array, and each of thesensing subunits is respectively provided with at least one imagesensor; and all of the sensing subunits are electrically connectedthrough the signal processing circuit layer.
 8. The image collectionchip of claim 1, further comprising a light-transmitting medium layerbetween the optical modulation layer and the image sensing layer.
 9. Anobject imaging recognition device, comprising: a light source configuredto emit spectra to an object to be imaged, so that the spectra areincident on an image collection chip as incident light after the spectrapass through the object to be imaged; and the image collection chip ofclaim 1, provided on a same side of the object to be imaged along withthe light source; wherein, the image collection chip is configured toperform light modulation on the incident light by using each set of thepixel confirmation modules respectively to obtain at least two modulatedspectra, and to sense and detect light intensity of each of themodulated spectra respectively to determine pixel data of respectivepixel points respectively.
 10. An object imaging recognition methodbased on the object imaging recognition device of claim 9, comprising:emitting spectra to the object to be imaged using the light source, sothat the spectra are incident on the image collection chip as incidentlight after the spectra pass through the object to be imaged; performinglight modulation on the incident light using each set of pixelconfirmation modules of the image collection chip so as to obtainseveral modulated spectra, and sensing and detecting the light intensityof each of the modulated spectra respectively to determine each set ofpixel data; and integrating all the pixel data to form an output image.11. The image collection chip of claim 2, wherein when the respectivemodulation holes are combined and arranged according to the specificcross-sectional shape, the modulation holes are arranged at randompositions.
 12. The image collection chip of claim 1, whereincross-sectional shapes of the modulation holes of a same modulationsubunit are different.
 13. The image collection chip of claim 2, furthercomprising a signal processing circuit layer connected below the imagesensing layer and configured to electrically connect respective sensingunits.
 14. The image collection chip of claim 3, further comprising asignal processing circuit layer connected below the image sensing layerand configured to electrically connect respective sensing units.
 15. Theimage collection chip of claim 4, further comprising a signal processingcircuit layer connected below the image sensing layer and configured toelectrically connect respective sensing units.
 16. The image collectionchip of claim 5, further comprising a signal processing circuit layerconnected below the image sensing layer and configured to electricallyconnect respective sensing units.
 17. The image collection chip of claim2, further comprising a light-transmitting medium layer between theoptical modulation layer and the image sensing layer.
 18. The imagecollection chip of claim 3, further comprising a light-transmittingmedium layer between the optical modulation layer and the image sensinglayer.
 19. The image collection chip of claim 4, further comprising alight-transmitting medium layer between the optical modulation layer andthe image sensing layer.
 20. The image collection chip of claim 5,further comprising a light-transmitting medium layer between the opticalmodulation layer and the image sensing layer.